. Electronic Components Datasheets mmbt4401 free download

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MMBT4401 Switching Transistor NPN Silicon COLLECTOR 3 3 1 1 BASE 2 2 EMITTER SOT-23 Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1) 225 mW TA=25 C PD Derate above 25 C 1.8 mW/ C Thermal Resistance, Junction to Ambient R qJA 556 C/W Total Device Dissipation 300 mW Alumina Substrate, (2) TA=25 C PD Derate above 25 C 2.4 mW/ C Thermal Resistance, Junction to Ambient R qJA 417 C/W Junction and Storage, Temperature TJ,Tstg -55 to +150 C Device Marking MMBT4401=2X Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off C har acter istics Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC=0.1mAdc, IE=0)